Preparation of SnS2/MoS2 with p-n heterojunction for NO2 sensing

被引:0
|
作者
Shen, Ziyu [1 ]
Lu, Junfeng [1 ]
Jin, Dingfeng [1 ]
Jin, Hongxiao [1 ]
机构
[1] China Jiliang Univ, Coll Mat & Chem, Hangzhou, Peoples R China
关键词
MoS2; SnS2; NO2; gas sensor; nanoflower; nanoplate; GAS; SENSORS; DESIGN;
D O I
10.1088/1361-6528/ad4902
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Conventional metal sulfide (SnS2) gas-sensitive sensing materials still have insufficient surface area and slow response/recovery times. To increase its gas-sensing performance, MoS2 nanoflower was produced hydrothermally and mechanically combined with SnS2 nanoplate. Extensive characterization results show that MoS2 was effectively integrated into SnS2. Four different concentrations of SnS2-MoS2 composites were evaluated for their NO2 gas sensitization capabilities. Among them, SnS2-15% MoS2 at 170 degrees C demonstrated the greatest response values to NO2, 7.3 for 1 ppm NO2, which is about three times greater than the SnS2 sensor at 170 degrees C (2.58). The creation of pn junctions following compositing with SnS2 was determined to be the primary reason for the composite's faster recovery time, while the heterojunction allowed for the rapid separation of hole-electron pairs. Because the MoS2 surface has multiple vacancy defects, the adsorption energy of these vacancies is significantly higher than that of other places, resulting in increased NO2 adsorption. Furthermore, MoS2 can serve as active adsorption sites for SnS2 micrometer sheets during gas sensing. This study may help to build new NO2 gas sensors.
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页数:9
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