Tunability of the nonlinear optical absorption in a GaAs/Ga 0.7 Al 0.3 As spherical quantum dots under external factors

被引:1
|
作者
Chang, Ceng [1 ]
Li, Xuechao [1 ]
Cai, Yawen [1 ]
Yan, Xiaolong [1 ]
Wang, Xing [1 ]
机构
[1] Anhui Univ Sci & Technol, Ctr Fundamental Phys, Sch Mech & Photoelect Phys, Huainan 232001, Peoples R China
基金
中国国家自然科学基金;
关键词
Schrodinger equation; Optical absorption; Quantum dots; HYDROSTATIC-PRESSURE; ANALYTICAL APPROXIMATIONS; SCHRODINGER-EQUATION; GENERATION; STATES; 2ND;
D O I
10.1016/j.photonics.2024.101277
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We theoretically studied the linear, third-order nonlinear and total optical absorption coefficient changes of a typical GaAs/Al 0.3 Ga 0.7 As quantum dot system under the influence of hydrostatic pressure and temperature. The influence of hydrostatic pressure and temperature on the system is treated within the framework of effective mass. In this method, the relative changes of linear and nonlinear absorption coefficients are obtained by using density matrix method and iterative method. In addition, we also reveal the mechanism of the influence of hydrostatic pressure and temperature on the nonlinear optical properties, which is of great significance for us to better understand the causes. We have shown that hydrostatic pressure and temperature change the effective mass, resulting in significant changes in the linear and nonlinear optical properties of the system. In addition, we also reveal the mechanism of the influence of effective mass on the nonlinear optical properties, which is of great significance for us to better understand the causes.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Exciton fine structure in strain-free GaAs/Al0.3Ga0.7As quantum dots:: Extrinsic effects
    Abbarchi, M.
    Mastrandrea, C. A.
    Kuroda, T.
    Mano, T.
    Sakoda, K.
    Koguchi, N.
    Sanguinetti, S.
    Vinattieri, A.
    Gurioli, M.
    [J]. PHYSICAL REVIEW B, 2008, 78 (12):
  • [32] Temperature dependence of optical properties of Ga0.3In0.7NxAs1-x quantum dots grown on GaAs (001)
    Nishikawa, A
    Hong, YG
    Tu, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1515 - 1517
  • [33] Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects
    Morales, A. L.
    Raigoza, N.
    Duque, C. A.
    [J]. BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 862 - 865
  • [34] Electronic and optical properties of strained InxGa1-xAs/GaAs and strain-free GaAs/Al0.3Ga0.7As quantum dots on (110) substrates
    Singh, Ranber
    Bester, Gabriel
    [J]. PHYSICAL REVIEW B, 2013, 88 (07):
  • [35] Optical investigation of coupled GaAs/Al0.3Ga0.7As double quantum wells separated by AlAs barriers
    Sek, G
    Ryczko, K
    Ciorga, M
    Bryja, L
    Kubisa, M
    Misiewicz, J
    Bayer, M
    Koeth, J
    Forchel, A
    [J]. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, 2000, 81 : 91 - 95
  • [36] Optical investigations of the above barrier state transitions in GaAs/Al0.3Ga0.7As double quantum wells
    Utko, M
    Sek, G
    Ryczko, K
    Bryja, L
    Misiewicz, J
    Bayer, M
    Koeth, J
    Forchel, A
    [J]. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2): : 167 - 169
  • [37] OPTICAL-PROPERTIES OF EXCITONS IN GAAS/AL0.3GA0.7AS SYMMETRICAL DOUBLE QUANTUM-WELLS
    WESTGAARD, T
    ZHAO, QX
    FIMLAND, BO
    JOHANNESSEN, K
    JOHNSEN, L
    [J]. PHYSICAL REVIEW B, 1992, 45 (04) : 1784 - 1792
  • [38] INTERSUBBAND OPTICAL-ABSORPTION IN HEAVILY DOPED N-TYPE GAAS/AL0.3GA0.7AS MULTIPLE QUANTUM-WELLS
    JOGAI, B
    MANASREH, MO
    STUTZ, CE
    WHITNEY, RL
    KINELL, DK
    [J]. PHYSICAL REVIEW B, 1992, 46 (11): : 7208 - 7211
  • [39] Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing
    Li, G
    Chua, SJ
    Xu, SJ
    Wang, XC
    Helmy, AS
    Ke, ML
    Marsh, JH
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (23) : 3393 - 3395
  • [40] Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
    Wang, Guodong
    Liang, Baolai
    Juang, Bor-Chau
    Das, Aparna
    Debnath, Mukul C.
    Huffaker, Diana L.
    Mazur, Yuriy I.
    Ware, Morgan E.
    Salamo, Gregory J.
    [J]. NANOTECHNOLOGY, 2016, 27 (46)