Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

被引：0
|
作者：
Sharov, V. A. [1 ,2 ]
Alekseev, P. A. [2 ]
Fedorov, V. V. [1 ]
Mukhin, I. S. [1 ]
机构：
[1] Alferov Univ, St Petersburg, Russia
[2] Ioffe Inst, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2024年 / 17卷 / 01期
基金：
俄罗斯科学基金会;
关键词：
nanowires; GaP; gallium phosphide; conductivity; doping; atomic force microscopy; SIMULATION;
D O I：
10.18721/JPM.171.120
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Growth strategies for achieving highly-doped GaP nanowires are investigated. Eight nanowire arrays are synthesized under different growth parameters via molecular beam epitaxy with the use of silicon and beryllium as n- and p- dopants. Electrical conductivity of individual nanowires from each array is investigated via conductive atomic force microscopy. The obtained current-voltage characteristics are numerically analyzed, the impact of nanowire geometry, contact properties and doping on the conductivity is estimated.
引用
收藏
页码：125 / 130
页数：6
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