Impact of dark current on pinned photo-diode capacitance of CMOS image sensor in low illumination regime

被引：0
|
作者：
Mohsin Suharwerdi
Gausia Qazi
机构：
[1] DepartmentofElectronics&CommunicationEngineering,NationalInstituteofTechnology
来源：
Optoelectronics Letters | 2024年 / 20卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TP212 [发送器（变换器）、传感器]; TN31 [半导体二极管];
学科分类号：
080202 ;
摘要：
<正>Applications for quanta and space sensing both depend on efficient low-light imaging. To precisely optimize and design image sensor pixels for these applications, it is crucial to analyze the mechanisms behind dark current generation, considering factors such as temperature, trap cross-section and trap concentration.
引用
收藏
页码：654 / 657
页数：4
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