Thermal influence on performance characteristics of double gate MOSFET biosensors with gate stack configuration

被引:0
|
作者
Das, Satish K. [1 ,2 ]
Biswal, Sudhansu M. [2 ]
Giri, Lalat Indu [1 ]
Swain, Dibyanshu [2 ]
机构
[1] NIT Goa, Dept ECE, Veroda, Goa, India
[2] SIT, Dept ECE, Bhubaneswar, Odisha, India
关键词
MOSFET; Biosensor; Gate stack; Short channel effects (SCEs); Transconductance; Sensitivity parameters; Electrical characteristics; LABEL-FREE BIOSENSOR; ELECTROSTATIC PERFORMANCE;
D O I
10.1007/s42452-024-06055-1
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
This study observes the MOSFET's performance concerning several biomolecules for use as a biosensor device. The double gate MOSFET with gate stack configuration has been chosen as the suggested device to surpass the limitations of short-channel effects (SCEs). The cavity was created to restrict the passage of charged and uncharged biological molecules so that they could be detected. These molecules fill the cavity, changing the device's electrical properties. The Double Gate MOSFET (DG-MOSFET) biosensor is subject to limitations such as Short Channel Effects (SCEs) and issues with the power supply. The suggested device decreased SCEs and it also demonstrates the potential benefits of having DG-MOSFETs with gate stacking for biosensor applications. Comparison of transconductance, the generating factor for transconductance, and sensitivity parameters such as Id and Vth sensitivity and Ion/Ioff sensitivity has been carried out in this study. The variation of temperature can influence the mobility of charge carriers within the semiconductor, affecting the conductance of the sensor.Depending on the specific biomolecule being detected, changes in temperature can modulate the interaction between the biomolecule and the sensor surface, leading to alterations in the electrical properties of the device and these changes can be precisely measured, thereby enhancing the sensitivity of detection.By systematically varying the temperature, researchers can explore the thermodynamic and kinetic aspects of the binding events, allowing for fine-tuning of the sensor performance to meet specific application requirements.
引用
收藏
页数:16
相关论文
共 50 条
  • [31] Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
    Srivastava, Viranjay M.
    Yadav, K. S.
    Singh, G.
    MICROELECTRONICS JOURNAL, 2011, 42 (03) : 527 - 534
  • [32] Effect of Temperature and Gate Stack on the Linearity and Analog Performance of Double Gate Tunnel FET
    Narang, Rakhi
    Saxena, Manoj
    Gupta, R. S.
    Gupta, Mridula
    TRENDS IN NETWORKS AND COMMUNICATIONS, 2011, 197 : 466 - +
  • [33] A Comparative study of Radio Frequency Stability performance of Double Gate MOSFET and Double Gate Tunnel FET
    Sivasankaran, K.
    Mallick, P. S.
    2013 INTERNATIONAL CONFERENCE ON GREEN COMPUTING, COMMUNICATION AND CONSERVATION OF ENERGY (ICGCE), 2013, : 220 - 224
  • [34] Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET
    Ramesh, R.
    Madheswaran, M.
    Kannan, K.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 : 418 - 432
  • [35] Analytical Modeling of the Surface Potential of Triple Material Symmetrical Gate Stack Double Gate (TMGS-DG) MOSFET
    Singh, Nidhi
    Tripathi, Shweta
    2014 RECENT ADVANCES AND INNOVATIONS IN ENGINEERING (ICRAIE), 2014,
  • [36] Study on Doping Profile and Scaling Characteristics of Gate and Channel Engineered Symmetric Double Gate MOSFET
    Mahmud, Md. Arafat
    Bin Kashem, Md. Tashfiq
    Subrina, Samia
    2016 9TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), 2016, : 255 - 258
  • [37] Effect of body doping on double-gate MOSFET characteristics
    Lu, Huaxin
    Lu, Wei-Yuan
    Taur, Yuan
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)
  • [38] Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET
    Mohapatra, S. K.
    Pradhan, K. P.
    Artola, L.
    Sahu, P. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 : 455 - 462
  • [39] Performance analysis of junctionless DG-MOSFET-based 6T-SRAM with gate-stack configuration
    Tayal, Shubham
    Nandi, Ashutosh
    MICRO & NANO LETTERS, 2018, 13 (06): : 838 - 841
  • [40] Analysis of Gate Misalignment Effects in Double Gate Junctionless MOSFET
    Jana, Gargi
    Majumdar, Madhuchhanda
    Chanda, Manash
    Sarkar, Chandan K.
    2018 INTERNATIONAL CONFERENCE ON ADVANCES IN COMMUNICATION AND COMPUTING TECHNOLOGY (ICACCT), 2018, : 122 - 125