Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics

被引：0
|
作者：
Liu, Jianke [1 ]
Chen, Jiaojiao [1 ]
Cao, Wenbin [1 ]
Su, Jinfeng [1 ]
Li, Zhizhi [1 ]
Xu, Rongkai [1 ]
Liu, Shihua [1 ]
机构：
[1] Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an,710021, China
来源：
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2022年 / 50卷 / 09期
关键词：
Compendex;
D O I：
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中图分类号：
学科分类号：
摘要：
Bismuth compounds - Capacitance - Chromium compounds - Electric fields - Electric losses - II-VI semiconductors - Manganese oxide - Scanning electron microscopy - Schottky barrier diodes - Silicon oxides - Sintering - Varistors - Zinc oxide
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页码：2366 / 2373
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