Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

被引：0
|
作者：
Raja A. [1 ,2 ]
Mukherjee K. [1 ,3 ]
Roy J.N. [2 ,3 ]
机构：
[1] Physics Department, Banwarilal Bhalotia College, Asansol
[2] Physics Department, Kazi Nazrul University, Asansol
[3] Centre of Organic Spintronics and Optoelectronic Devices, KNU, Asansol
来源：
Journal of Optical Communications | 2023年 / 44卷 / s1期
关键词：
AND gate; ASE noise; majority gate; polarization rotation; semiconductor optical amplifier;
D O I：
10.1515/joc-2020-0303
中图分类号：
学科分类号：
摘要：
Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%. © 2023 Walter de Gruyter GmbH. All rights reserved.
引用
收藏
页码：S47 / S54
页数：7
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