Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

被引：0
|
作者：
Shen, Yang [1 ]
Tian, He [1 ]
Liu, Yanming [1 ]
Wu, Fan [1 ]
Yan, Zhaoyi [1 ]
Hirtz, Thomas [1 ]
Wang, Xuefeng [1 ]
Ren, Tian-Ling [1 ]
机构：
[1] School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
来源：
Frontiers in Physics | 2021年 / 9卷
关键词：
This work was supported by the National Key R&D Program (2020YFA0709800) and the National Natural Science Foundation (62022047; 61874065; 51861145202; U20A20168) of China. This work is also supported by the Young Elite Scientists Sponsorship Program by CAST under Grant 2018QNRC001; and by the Fok Ying-Tong Education Foundation under Grant 171051. This work was also supported by the Beijing National Research Center for Information Science and the Technology Youth Innovation Fund (BNR2021RC01007);
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摘要：
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