Two-dimensional material-based memristive devices for alternative computing

被引:1
|
作者
Panisilvam, Jey [1 ]
Lee, Ha Young [1 ]
Byun, Sujeong [1 ]
Fan, Daniel [1 ]
Kim, Sejeong [1 ]
机构
[1] Univ Melbourne, Fac Engn & Informat Technol, Dept Elect & Elect Engn, Melbourne, Vic 3000, Australia
来源
NANO CONVERGENCE | 2024年 / 11卷 / 01期
关键词
2D materials; Memristors; Resistive switching; Neuromorphic computing; Crossbar arrays; RESISTIVE SWITCHING BEHAVIOR; OPTICAL-PROPERTIES; RECENT PROGRESS; MEMORY; GRAPHENE; LIGHT; MECHANISMS; FILMS; INTEGRATION; ARRAYS;
D O I
10.1186/s40580-024-00432-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.
引用
收藏
页数:20
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