Gain-Coupled High-Power Low-RIN 1.55 μm Single-Mode DFB Lasers With Wide Ridge Waveguide

被引：0

作者：

He, Mukun ^{[1
,2
]}

Gan, Lin ^{[1
,2
]}

Li, Hongtao ^{[1
,2
]}

Wang, Jian ^{[1
,2
]}

Han, Yanjun ^{[1
,2
]}

Sun, Changzheng ^{[1
,2
]}

Xiong, Bing ^{[1
,2
]}

Hao, Zhibiao ^{[1
,2
]}

Wang, Lai ^{[1
,2
]}

Luo, Yi ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2024年 / 36卷 / 10期

关键词：

Waveguide lasers; Gratings; Distributed feedback devices; Laser modes; Measurement by laser beam; Optical waveguides; Semiconductor lasers; Gain-coupling mechanism; carrier density ripple; carrier-injection gratings; double trench ridge waveguide; FEEDBACK SEMICONDUCTOR-LASERS;

D O I：

10.1109/LPT.2024.3386701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gain-coupled high-power low-RIN 1.55 mu m single-mode distributed feedback (DFB) laser with a 6- mu m -wide ridge waveguide is demonstrated based on an optimized double trench ridge waveguide structure. Gain-coupling mechanism is implemented by carrier-injection gratings. The impact of the doping concentration and thickness variations in the p-InP spacer layer on the carrier density ripple within the active region is investigated to achieve a large gain-coupling coefficient. The fabricated DFB laser exhibits a similar to 220 mW kink-free output power with a relative intensity noise (RIN) below -166 dB/Hz at 25 degrees C. The side-mode suppression-ratio (SMSR) is about 60 dB and the far-field full-width-at-half-maximum (FWHM) divergence angles are 10(degrees)x20(degrees) .

引用

页码：653 / 656

页数：4

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