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Gain-Coupled High-Power Low-RIN 1.55 μm Single-Mode DFB Lasers With Wide Ridge Waveguide
被引:0
|作者:
He, Mukun
[1
,2
]
Gan, Lin
[1
,2
]
Li, Hongtao
[1
,2
]
Wang, Jian
[1
,2
]
Han, Yanjun
[1
,2
]
Sun, Changzheng
[1
,2
]
Xiong, Bing
[1
,2
]
Hao, Zhibiao
[1
,2
]
Wang, Lai
[1
,2
]
Luo, Yi
[1
,2
]
机构:
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
关键词:
Waveguide lasers;
Gratings;
Distributed feedback devices;
Laser modes;
Measurement by laser beam;
Optical waveguides;
Semiconductor lasers;
Gain-coupling mechanism;
carrier density ripple;
carrier-injection gratings;
double trench ridge waveguide;
FEEDBACK SEMICONDUCTOR-LASERS;
D O I:
10.1109/LPT.2024.3386701
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A gain-coupled high-power low-RIN 1.55 mu m single-mode distributed feedback (DFB) laser with a 6- mu m -wide ridge waveguide is demonstrated based on an optimized double trench ridge waveguide structure. Gain-coupling mechanism is implemented by carrier-injection gratings. The impact of the doping concentration and thickness variations in the p-InP spacer layer on the carrier density ripple within the active region is investigated to achieve a large gain-coupling coefficient. The fabricated DFB laser exhibits a similar to 220 mW kink-free output power with a relative intensity noise (RIN) below -166 dB/Hz at 25 degrees C. The side-mode suppression-ratio (SMSR) is about 60 dB and the far-field full-width-at-half-maximum (FWHM) divergence angles are 10(degrees)x20(degrees) .
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页码:653 / 656
页数:4
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