Effect of doping zno on the structure and electrical characteristics of znsb phase change film

The work aims to increase the crystallization temperature and crystalline sheet resistance of ZnSb film by doping different amounts of ZnO. These doped ZnSb films of different ZnO content have been deposited by magnetron sputtering. The relationships between sheet resistance and temperature of films were measured by vacuum in situ four-probe device. Chemical composition, microstructure, crystallization and melting temperature, film thickness and surface morphology, and optical band gap were analyzed by using EDS, XRD, Raman, DSC, FESEM and UV-Vis. The results show, when the doped ZnO content was 1.6at%, the crystallization temperature of the film increased from 253 ℃ to 263 ℃ and the optical band gap promoted from 0.37 eV to 0.38 eV. At the same time, the grain size of doped film was about 20 nm, which was much lower than that of un-doped films. The results of structural analysis for these films showed that the element O was more easily combined with Sb. When ZnO was excessively doped, Sb2O3 phase would precipitate in these films, which would decrease the crystallization temperature. Doping low content of ZnO can make films result in higher crystallization temperature, finer ZnSb grains and higher sheet resistance of ZnSb films. However, excessive ZnO doping can also result in the formation of separated Sb2O3 phase, which deteriorate the properties of the films. © 2019, Chongqing Wujiu Periodicals Press. All rights reserved.