The effect of titanium doping on the structure and phase change characteristics of Sb4Te

被引：17

作者：

Zhu, Min ^{[1
,2
]}

Wu, Liangcai ^{[1
]}

Rao, Feng ^{[1
]}

Song, Zhitang ^{[1
]}

Ji, Xinglong ^{[1
,2
]}

Yao, Dongning ^{[1
]}

Cheng, Yan ^{[1
]}

Lv, Shilong ^{[1
]}

Song, Sannian ^{[1
]}

Liu, Bo ^{[1
]}

Xu, Ling ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai Key Lab Nanofabricat Technol Memory, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China

[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 12期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; SB; MEMORY; SPEED; CRYSTALLIZATION;

D O I：

10.1063/1.4821769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As a growth-dominated phase change material, Sb4Te (ST) has fast crystallization speed while thermal stability is very poor, which makes it unsuitable for application in phase change random access memory (PCRAM). After doping Ti, the crystallization temperature is greatly improved to 210.33 degrees C, which is much higher than that of conventional Ge2Sb2Te5 (similar to 150 degrees C), and the melting point is reduced to 540.27 degrees C. In addition, grain size of crystalline Ti-doped Sb4Te (TST) film is significantly decreased to nanoscale. Ti atom is believed to occupy the lattice site of Sb atom in TST. With good thermal stability, TST-based PCRAM cell also has fast crystallization rate of 6 ns. Furthermore, the energy consumption is also lower than that of Ge2Sb2Te5-based one. Endurance of exceeding 2E5 cycles is obtained with a resistance ratio of one order of magnitude. Therefore, Ti doping seems to be a good way to solve the contradiction between thermal stability and fast crystallization speed of Sb-Te alloys. (C) 2013 AIP Publishing LLC.

引用

页数：6

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