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Correlated electron physics near a site-selective pressure-induced Mott transition in α-LiFe5O8
被引:0
|作者:
Layek, Samar
[1
,2
,3
]
Greenberg, Eran
[2
,4
,6
]
Levy, Davide
[2
]
Prakapenka, Vitali
[4
]
Saxena, Siddharth S.
[1
,5
]
Rozenberg, Gregory Kh.
[2
]
机构:
[1] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[2] Tel Aviv Univ, Sch Phys & Astron, Tel Aviv, Israel
[3] UPES, Dept Phys, Appl Sci Cluster, Dehra Dun, Uttarakhand, India
[4] Univ Chicago, Ctr Adv Radiat Sources, Chicago, IL USA
[5] British Management Univ Tashkent, 35 Bobur Mirza St, Tashkent, Uzbekistan
[6] SNRC, Appl Phys Div, Yavne, Israel
基金:
美国国家科学基金会;
关键词:
PHASE-TRANSFORMATIONS;
CRYSTAL-CHEMISTRY;
SPINEL;
MAGNETITE;
CAFE2O4;
STATE;
FE3O4;
D O I:
10.1038/s43246-024-00560-x
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The Mott insulator-to-metal transition (IMT) driven by electron correlations has been among the main research topics in materials science over the past decades. The complex interplay between electronic and lattice degrees of freedom leads to various transition scenarios. Of particular interest may be the case of a transition involving the formation of complex phases comprising regions that differ significantly in their physical properties within the same material. Here, we present the results that advance the understanding of the IMT phenomenon, offering the documentation of a pure site-selective mechanism that is not complicated by any structural and spin transformation. Combining XRD, resistivity, Mossbauer and Raman spectroscopy measurements, we provide evidence for a pure pressure-induced Mott transition in alpha-LiFe5O8, characterized by site-selective delocalization of electrons, leading to the formation, above similar to 65 GPa, of a site-selective Mott phase consisting of metallic and insulating sublattices. We note that the electron delocalization in the partially disordered octahedral sublattice cannot be understood purely in terms of a Mott transition, the Anderson-Mott transition picture seems more adequate.
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页数:8
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