Insights into High-Dose Helium Implantation of Silicon

被引：0
|
作者：
Aleksandrov, P. A. [1 ]
Emelyanova, O. V. [2 ]
Shemardov, S. G. [1 ]
Khmelenin, D. N. [2 ]
Vasiliev, A. L. [1 ,2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
[2] Kurchatov Inst, Shubnikov Inst Crystallog, Natl Res Ctr, Kurchatov Complex Crystallog & Photon, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2024年 / 69卷 / 03期
关键词：
SI; VOIDS; TEMPERATURE; CRYSTALS; CAVITIES; BUBBLES;
D O I：
10.1134/S1063774524600340
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 x 10(17) He+/cm(2) without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 x 10(17) He+/cm(2) and higher promotes flaking.
引用
下载
收藏
页码：380 / 389
页数：10
相关论文
共 50 条
  • [1] HIGH-DOSE ARSENIC IMPLANTATION OF SILICON
    BUDINOV, HI
    KARPUZOV, DS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 73 (03): : 352 - 356
  • [2] DAMAGE STRUCTURE INDUCED BY HIGH-DOSE HELIUM IMPLANTATION INTO SINGLE-CRYSTAL SILICON
    KOTAI, E
    PASZTI, F
    MANUABA, A
    MEZEY, G
    GYULAI, J
    BARNA, A
    BARNA, P
    RADNOCZI, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 312 - 316
  • [3] Precipitation of Boron in Silicon on High-Dose Implantation
    Feklistov, K. V.
    Fedina, L. I.
    Cherkov, A. G.
    SEMICONDUCTORS, 2010, 44 (03) : 285 - 288
  • [4] HIGH-DOSE IRON IMPLANTATION INTO SILICON AND METALS
    MULLER, G
    KLINGELHOFER, G
    SCHWALBACH, P
    KANKELEIT, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 50 (1-4): : 384 - 390
  • [5] Precipitation of boron in silicon on high-dose implantation
    K. V. Feklistov
    L. I. Fedina
    A. G. Cherkov
    Semiconductors, 2010, 44 : 285 - 288
  • [6] HIGH-DOSE IRON IMPLANTATION INTO SILICON AND METALS
    MULLER, G
    KLINGELHOFER, G
    SCHWALBACH, P
    KANKELEIT, E
    HYPERFINE INTERACTIONS, 1990, 56 (1-4): : 1627 - 1635
  • [7] EFFECTS OF HIGH-DOSE FLUORINE IMPLANTATION INTO SILICON
    WONG, SP
    WILSON, IH
    CHEUNG, WY
    MOK, WK
    HARK, SK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 481 - 485
  • [8] HIGH-CURRENT AND HIGH-DOSE PHOSPHORUS IMPLANTATION IN SILICON
    TAMURA, M
    YAGI, K
    SAKUDO, N
    TOKIGUTI, K
    TOKUYAMA, T
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 109 - 114
  • [9] HIGH-DOSE URANIUM ION-IMPLANTATION INTO SILICON
    BROWN, IG
    GALVIN, JE
    YU, KM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 31 (04): : 558 - 562
  • [10] MODEL INVESTIGATIONS OF THE OXIDATION OF SILICON BY HIGH-DOSE IMPLANTATION
    JAGER, HU
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 748 - 751
12345