Stability of electroluminescent perovskite quantum dots light-emitting diode

被引:11
|
作者
Wen, Zhuoqi [1 ]
Xie, Fengxian [1 ,2 ]
Choy, Wallace. C. H. [3 ]
机构
[1] Fudan Univ, Acad Engn & Technol, Shanghai, Peoples R China
[2] Fudan Univ, Inst Elect Light Sources, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China
[3] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong 999077, Peoples R China
来源
NANO SELECT | 2022年 / 3卷 / 03期
基金
美国国家科学基金会;
关键词
electroluminescence; nanocrystal; perovskite; quantum dots; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; LIGAND-MEDIATED SYNTHESIS; TURN-ON VOLTAGE; HALIDE PEROVSKITE; HIGH-PERFORMANCE; HIGH-EFFICIENCY; HIGHLY EFFICIENT; SOLAR-CELLS; OPTICAL-PROPERTIES; SEQUENTIAL DEPOSITION;
D O I
10.1002/nano.202100203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Colloidal quantum dots (QDs) are considered to be a promising candidate for light-emitting diodes (LEDs) applications considering their wide gamut range, simple color tuning, compatibility with large-size and flexible substrates. Benefiting from the distinguished properties such as high photoluminescence quantum efficiency (PLQY), narrow emission linewidth, and low material cost, perovskite QDs have attracted wide attention from researchers. Despite tremendous progress has been made during the past several years, perovskite QDs-based LEDs (QLEDs) are still plagued by the instability arising from the operation of the perovskite QLEDs, which have not been studied systematically. In this review, the origin of the instability of perovskite QLEDs is attributed to the vulnerability of emission materials and constituent layers. Simultaneously, the effective strategies to improve the durability of perovskite QDs and QLEDs are summarized, such as component engineering, ligand passivation, fabrication of robust and uniform constituent layers, as well as adopt appropriate device structures and driving modes. Ultimately, we put forward insights on the future research direction and prospects for perovskite QLEDs in practical applications.
引用
收藏
页码:505 / 530
页数:26
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