Cu-Doped ZnInGaSe Nanocrystals with Controlled Stoichiometry for Green Emission

被引:1
|
作者
Qin, Yue [1 ]
Song, Xuerong [1 ]
Yang, Chaoyi [1 ]
Zhang, Hanzhuang [1 ]
Ji, Wenyu [1 ]
Ning, Jiajia [1 ]
机构
[1] Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China
基金
国家重点研发计划;
关键词
ZnInGaSe; magic size clusters; doped; core/shell; green emitters; LIGHT-EMITTING-DIODES; TURN-ON VOLTAGE; QUANTUM DOTS; HIGHLY EFFICIENT; COLLOIDAL NANOCRYSTALS; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; MECHANISM; DEVICES; CUINS2;
D O I
10.1021/acsanm.4c01163
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As one of Cd-free semiconductor nanocrystals, Zn-based nanocrystals are widely studied due to their wide band gap to be a candidate for blue- and green-emitting materials. Herein, ZnInGaSe nanocrystals were synthesized with the controlled stoichiometry from the intermediate of ZnInGaSe magic size clusters. The approach via the magic size clusters greatly increases the amount of Ga in ZnInGaSe NCs. After the growth of the ZnS shell, ZnInGaSe/ZnS core/shell nanocrystals exhibited improved green emission. Furthermore, Cu as the impurity was introduced into ZnInGaSe NCs to reduce the vacancy defects to promote the photoluminescence. Finally, a photoluminescence quantum yield of 35.7% was obtained in Cu:ZnInGaSe/ZnS core/shell nanocrystals. The donor-acceptor recombination mechanism was proposed to explain the optical properties in ZnInGaSe NCs. Cu:ZnInGaSe nanocrystals were utilized in light-emitting diodes, showing the potential of ZnInGaSe nanocrystals for optoelectronic devices.
引用
收藏
页码:9649 / 9657
页数:9
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