High-performance SiOx/MgOx electron-selective contacts for crystalline silicon solar cells

被引：2
|
作者：
Li, Kun [1 ]
Gao, Kun [1 ]
Wang, Xinyu [1 ]
Lou, Xinliang [1 ,3 ]
Xu, Dacheng [1 ]
Xing, Chunfang [1 ,2 ]
Li, Wenhao [1 ]
Li, Haicheng [1 ]
Yang, Xinbo [1 ]
机构：
[1] Soochow Univ, Soochow Inst Energy & Mat Innovat SIEMIS, Coll Energy, Suzhou 215006, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat, Suzhou 215123, Peoples R China
[3] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
来源：
SCIENCE CHINA-MATERIALS | 2024年 / 67卷 / 09期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
crystalline silicon solar cell; electron-selective contact; magnesium oxide; PASSIVATING CONTACTS; SURFACE; FILMS; OXIDE; BAO; MGO;
D O I：
10.1007/s40843-024-2950-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High carrier recombination loss at the metal and silicon contact regions is one of the dominant factors constraining the power conversion efficiency (PCE) of crystalline silicon (c-Si) solar cells. Metal compound-based carrier-selective contacts are being intensively developed to address this issue. In this work, we present a high-performance electron-selective SiOx/MgOx contact for c-Si solar cells. The SiOx/MgOx stack is prepared by thermally-grown SiOx (similar to 0.7 nm) and thermally-evaporated MgOx (similar to 1.0 nm). The electron selectivity of SiOx/MgOx contact is investigated by measuring the surface passivation and the contact resistivity (rho(c)) on the c-Si surface. The results demonstrate that optimized SiOx/MgOx contact displays a very low rho(c) (3.4 m Omega cm(2)) and a good surface passivation on an n-type c-Si surface simultaneously. A high PCE of 21.1% is achieved on an n-type c-Si solar cell featuring a full-area SiOx/MgOx rear contact.
引用
收藏
页码：2866 / 2872
页数：7
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