Bilinear magnetoresistance and planar Hall effect in topological insulators: Interplay of scattering on spin-orbital impurities and nonequilibrium spin polarization

被引:1
|
作者
Boboshko, K. [1 ]
Dyrdal, A. [1 ]
机构
[1] Adam Mickiewicz Univ, Fac Phys, Dept Mesoscop Phys, ISQI, Ul Uniw Poznanskiego 2, PL-61614 Poznan, Poland
关键词
ELECTRIC-CURRENT; ORIENTATION; CONVERSION;
D O I
10.1103/PhysRevB.109.155420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have considered theoretically nonlinear transport phenomena known as bilinear magnetoresistance (BMR) and nonlinear planar Hall effect (NPHE) within the effective model describing surface states of a 3D topological insulator. Both phenomena can occur in nonmagnetic materials with strong spin -orbit interaction and reveal a term that depends linearly on the charge current density (external electric field) and in -plane magnetic field. In earlier studies, the physical mechanism of BMR and NPHE was related to scattering on spin -momentum locking inhomogeneities or to the hexagonal warping of Dirac cones. Here, we focus on another mechanism related to scattering on impurities that inherently contain spin -orbit coupling. Using the Green's function formalism and diagramatic method, we have derived analytical results for diagonal and transverse conductivities and determined nonlinear signals. The analytical and numerical results on BMR and NPHE indicate the possibility of determining the material constants, such as the Fermi wave vector and spin -orbit coupling parameter, by simple magnetotransport measurements.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Bilinear magnetoresistance in topological insulators: The role of spin-orbit scattering on impurities
    Boboshko, K.
    Dyrdal, A.
    Barnas, J.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 545
  • [2] Spin-Orbital Texture in Topological Insulators
    Zhang, Haijun
    Liu, Chao-Xing
    Zhang, Shou-Cheng
    PHYSICAL REVIEW LETTERS, 2013, 111 (06)
  • [3] Bilinear Planar Hall Effect in Topological Insulators Due to Spin-Momentum Locking Inhomogeneity
    Zarezad, Amir N.
    Barnas, Jozef
    Qaiumzadeh, Alireza
    Dyrdal, Anna
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (03):
  • [4] Spin hall effect in topological insulators
    Hai, Pham Nam
    Hai, Pham Nam; Hai, Pham Nam, 1600, Magnetics Society of Japan (44): : 137 - 144
  • [5] Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers
    Scharf, Benedikt
    Matos-Abiague, Alex
    Han, Jong E.
    Hankiewicz, Ewelina M.
    Zutic, Igor
    PHYSICAL REVIEW LETTERS, 2016, 117 (16)
  • [6] Photonic spin Hall effect in topological insulators
    Zhou, Xinxing
    Zhang, Jin
    Ling, Xiaohui
    Chen, Shizhen
    Luo, Hailu
    Wen, Shuangchun
    PHYSICAL REVIEW A, 2013, 88 (05):
  • [7] TOPOLOGICAL INSULATORS AND THE QUANTUM SPIN HALL EFFECT
    Kane, C. L.
    PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY, 2009, : 55 - 60
  • [8] The quantum spin Hall effect and topological insulators
    Qi, Xiao-Liang
    Zhang, Shou-Cheng
    PHYSICS TODAY, 2010, 63 (01) : 33 - 38
  • [9] Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect
    Nakayama, H.
    Althammer, M.
    Chen, Y. -T.
    Uchida, K.
    Kajiwara, Y.
    Kikuchi, D.
    Ohtani, T.
    Gepraegs, S.
    Opel, M.
    Takahashi, S.
    Gross, R.
    Bauer, G. E. W.
    Goennenwein, S. T. B.
    Saitoh, E.
    PHYSICAL REVIEW LETTERS, 2013, 110 (20)
  • [10] Spin-Momentum-Locking Inhomogeneities as a Source of Bilinear Magnetoresistance in Topological Insulators
    Dyrdal, A.
    Barnas, J.
    Fert, A.
    PHYSICAL REVIEW LETTERS, 2020, 124 (04)