Non-linear optical generation in Ga1−yAlyAs/GaAs/Ga1−xAlxAs quantum V-grooves: The effects of temperature and hydrostatic pressure

被引：0

作者：

Giraldo-Tobón, Eugenio ^{[1
,2
]}

Miranda, Guillermo L. ^{[1
]}

Fulla, M.R. ^{[2
,3
]}

机构：

[1] Universidad EIA Envigado, Colombia

[2] Escuela de Física, Universidad Nacional de Colombia, Medellín,AA,3840, Colombia

[3] Institución Universitaria Pascual Bravo, Medellín,AA,6564, Colombia

来源：

Photonics and Nanostructures - Fundamentals and Applications | 2021年 / 45卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1-xAlxAs double quantum well under the external fields
Kasapoglu, E.
[J]. PHYSICS LETTERS A, 2008, 373 (01) : 140 - 143
[32] Correction: Theoretical studies on the effects of pressure, temperature, and aluminum concentration on the optical absorption, refractive index and group velocity within GaAs/Ga1–xAlxAs quantum ring in the presence of Rashba spin–orbit interaction
H. A. Ghazwani
K. Hasanirokh
A. Yvaz
[J]. Optical and Quantum Electronics, 2024, 56
[33] EFFECT OF HYDROSTATIC-PRESSURE ON GAAS-GA1-XALXAS MICROSTRUCTURES
LEFEBVRE, P
GIL, B
MATHIEU, H
[J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5630 - 5634
[34] Non-linear response under terahertz radiation of an asymmetric Ga1-xAlxAs/GaAs/Ga1-yAlyAs V-groove nanowire confining a singly-ionized double donor
Giraldo-Tobon, Eugenio
Palacio, J. L.
Miranda, Guillermo L.
Fulla, M. R.
[J]. JOURNAL OF MATERIALS SCIENCE, 2022, 57 (18) : 8406 - 8416
[35] Hydrostatic pressure, temperature and aluminum concentration effects on the ground state of coupled donors in a GaAs-Ga1-xAlxAs quantum well
Fulla, M. R.
Suaza, Y. A.
Marin, J. H.
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (04): : 678 - 682
[36] Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga1-xAlxAs quantum wells
Aristizabal, P.
Restrepo, R. L.
Ospina, W.
Duque, C. A.
[J]. MICROELECTRONICS JOURNAL, 2008, 39 (11) : 1261 - 1263
[37] Hydrostatic pressure effects on donor-related absorption spectra in GaAs-Ga1-xAlxAs quantum wells
López, SY
Porras-Montenegro, N
Duque, CA
[J]. PHYSICA B-CONDENSED MATTER, 2005, 362 (1-4) : 41 - 49
[38] Temperature Dependences of the Electron Energy in Al(x)Ga1 - As-x / GaAs / Al(x)Ga1 - As-x Nanofilms of Different Thickness and Composition of the Barrier Material
Kondryuk, D. V.
Kramar, V. M.
[J]. JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2014, 6 (04)
[39] Determination of the Thickness and Concentration of Epitaxial Thin Ga1 - xAlxAs/GaAs films by using the Photoemission Jumps Method.
Bouabellou, A.
Schemelev, V.N.
Taguirov, I.R.
[J]. 1600, (145):
[40] GAAS-GA1-XALXAS HETEROSTRUCTURES STUDIED UNDER HYDROSTATIC-PRESSURE
BEERENS, J
GREGORIS, G
PORTAL, JC
ROBERT, JL
MERCY, JM
ALEXANDRE, F
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 577 - 585

← 1 2 3 4 5 →