Effect of carrier trapping on photoexcitation dynamics of green-emitting CdSe nanocrystals

被引:0
|
作者
Zhang, Huichao [1 ]
Huang, Bo [1 ]
机构
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China
基金
中国国家自然科学基金;
关键词
CdSe nanocrystals; Trap states; Carrier trapping/detrapping; Temperature dependence; QUANTUM DOTS; DEPENDENT PHOTOLUMINESCENCE; SEMICONDUCTOR NANOCRYSTALS; SURFACE; LUMINESCENCE; EXCITONS; KINETICS; DEFECTS; CDTE;
D O I
10.1016/j.cplett.2024.141257
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Trap states are deeply involved in the photoluminescence (PL) dynamics of semiconductor nanocrystals. This study focuses on the role of trap states in 3 nm CdSe nanocrystals without extra low-energy emission. Trap states create spectral differences at two excitation energies of 3.54 eV and 2.48 eV, as well as a slow PL decay channel with environmental robustness. In temperature-dependent measurements, there is a weakening process of PL quenching, which is consistent with PL lifetime undulation, resulting from the thermal activation of carrier detrapping. Furthermore, the different blue shift levels of PL peaks and PL excitation spectra with temperature was investigated.
引用
收藏
页数:6
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