Photon tunneling effects give rise to surface waves, amplifying radiative heat transfer in the near-field regime. Recent research has highlighted that the introduction of nanopores into materials creates additional pathways for heat transfer, leading to a substantial enhancement of near-field radiative heat transfer (NFRHT). Being a direct bandgap semiconductor, GaN has high thermal conductivity and stable resistance at high temperatures, and holds significant potential for applications in optoelectronic devices. Indeed, study of NFRHT between nanoporous GaN films is currently lacking, hence the physical mechanism for adding nanopores to GaN films remains to be discussed in the field of NFRHT. In this work, we delve into the NFRHT of GaN nanoporous films in terms of gap distance, GaN film thickness and the vacuum filling ratio. The results demonstrate a 27.2% increase in heat flux for a 10 nm gap when the nanoporous filling ratio is 0.5. Moreover, the spectral heat flux exhibits redshift with increase in the vacuum filling ratio. To be more precise, the peak of spectral heat flux moves from omega = 1.31 x 10(14) rad & sdot;s(-1) to omega = 1.23 x 10(14) rad & sdot;s(-1) when the vacuum filling ratio changes from f = 0.1 to f = 0.5; this can be attributed to the excitation of surface phonon polaritons. The introduction of graphene into these configurations can highly enhance the NFRHT, and the spectral heat flux exhibits a blueshift with increase in the vacuum filling ratio, which can be explained by the excitation of surface plasmon polaritons. These findings offer theoretical insights that can guide the extensive utilization of porous structures in thermal control, management and thermal modulation.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, Mexico
Castillo-Lopez, S. G.
Villarreal, C.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, Mexico
Villarreal, C.
Esquivel-Sirvent, R.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, Mexico
Esquivel-Sirvent, R.
Pirruccio, G.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20364, Mexico City 01000, DF, Mexico
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North China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R ChinaNorth China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R China
Wu, Ya
Zhou, Leping
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North China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R ChinaNorth China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R China
Zhou, Leping
Du, Xiaoze
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North China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R ChinaNorth China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R China
Du, Xiaoze
Yang, Yongping
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North China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R ChinaNorth China Elect Power Univ, Sch Energy Power & Mech Engn, Key Lab Condit Monitoring & Control Power Plant E, Minist Educ, Beijing 102206, Peoples R China