Exploring wetting & scaling behavior of rough silicon surfaces

被引:0
|
作者
Mishra, Indrani [1 ]
Joshi, Shalik R. [2 ]
Majumder, Subrata [3 ]
Varma, Shikha [1 ]
机构
[1] Inst Phys, Bhubaneswar, India
[2] Hanyang Univ, Dept Elect Engn, Seoul, South Korea
[3] NIT, Dept Phys, Patna, India
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2024年 / 179卷 / 1-2期
关键词
Roughness; ion irradiation; atomic force microscopy; height-height correlation; wetting; NANOWIRES;
D O I
10.1080/10420150.2024.2318731
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Here we study the roughening behavior, scaling properties and the wetting nature of the Silicon surfaces that have been irradiated with 3 keV Ar ions. These surfaces illustrate the formation of nanostructures and ripples, which evolve at higher fluences. The scaling studies have been applied to understand the evolution of the surfaces. Height- Height correlation method has been utilized to extract important scaling parameters, and the derived Hurst exponents (H) indicate these surfaces to be of self-affine type. The derived correlation lengths (xi) reflect long ranged correlations on the surface and evolution of the nanostructures. The nano-patterned surfaces show near hydrophobic behavior, which gets further enhanced with increasing irradiation.
引用
收藏
页码:199 / 205
页数:7
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