High Peak Power Ho : YLF Amplifier at 2.05 μm Seeded by an Electro-Optically Diode-Pumped Ho :GdVO4 Laser

被引：0
|
作者：
Dai, Wantian [1 ]
Liu, Tongyu [2 ]
Ding, Yu [2 ]
Yan, Mengmeng [2 ]
Zhang, Yongning [2 ]
Zhao, Yuwei [2 ]
机构：
[1] China Elect Technol Corp, Res Inst 53, Tianjin 300308, Peoples R China
[2] Natl Key Lab Electromagnet Space Secur, Tianjin 300308, Peoples R China
来源：
JOURNAL OF RUSSIAN LASER RESEARCH | 2024年 / 45卷 / 03期
关键词：
high peak power; Ho :YLF amplifier; Ho :GdVO4 laser; diode pumping; ZGP-OPO;
D O I：
10.1007/s10946-024-10214-5
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this study, we present a high peak power Ho :YLF amplifier seeded by an electro-optically diodepumped Ho :GdVO(4 )laser operating at 2.05 mu m. The diode-pumped Ho :GdVO4 laser, operating under a continuous-wave (CW) regime, achieved an output power of 7.1 W at an absorbed pump power of 28 W, resulting in a slope efficiency of 41.4%. At a repetition rate of 1 kHz, the laser delivered an average output power of 3.6 W with a pulse width of 4.3 ns. By utilizing a Ho :YLF crystal as the amplification medium, with a seed power of 3 W and an incident pump power of 22.5 W, the amplifier generates an average output power of 15.5 W with a pulse width of 4.5 ns. We calculate the maximum pulse energy and peak power to be 15.5 mJ and 3.4 MW, respectively.
引用
收藏
页码：295 / 299
页数：5
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