High Peak Power Ho : YLF Amplifier at 2.05 μm Seeded by an Electro-Optically Diode-Pumped Ho :GdVO4 Laser

被引:0
|
作者
Dai, Wantian [1 ]
Liu, Tongyu [2 ]
Ding, Yu [2 ]
Yan, Mengmeng [2 ]
Zhang, Yongning [2 ]
Zhao, Yuwei [2 ]
机构
[1] China Elect Technol Corp, Res Inst 53, Tianjin 300308, Peoples R China
[2] Natl Key Lab Electromagnet Space Secur, Tianjin 300308, Peoples R China
关键词
high peak power; Ho :YLF amplifier; Ho :GdVO4 laser; diode pumping; ZGP-OPO;
D O I
10.1007/s10946-024-10214-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this study, we present a high peak power Ho :YLF amplifier seeded by an electro-optically diodepumped Ho :GdVO(4 )laser operating at 2.05 mu m. The diode-pumped Ho :GdVO4 laser, operating under a continuous-wave (CW) regime, achieved an output power of 7.1 W at an absorbed pump power of 28 W, resulting in a slope efficiency of 41.4%. At a repetition rate of 1 kHz, the laser delivered an average output power of 3.6 W with a pulse width of 4.3 ns. By utilizing a Ho :YLF crystal as the amplification medium, with a seed power of 3 W and an incident pump power of 22.5 W, the amplifier generates an average output power of 15.5 W with a pulse width of 4.5 ns. We calculate the maximum pulse energy and peak power to be 15.5 mJ and 3.4 MW, respectively.
引用
收藏
页码:295 / 299
页数:5
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