Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Enhancing the performance of magnetic random access memories (MRAMs) is crucial, considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer ultrafast operation and enhanced reliability. Still, the energy efficiency and external magnetic field requirement for deterministic switching of nanomagnets with perpendicular magnetic anisotropy (PMA) are a significant hurdle. To address these issues, one of the proposed solutions employs a conically magnetized free layer magnetic tunnel junction device featuring second-order PMA. This approach can minimize the required switching current density by leveraging the interplay between first- and second-order PMA energies. Additionally, coupling with exchange bias from the antiferromagnet can eliminate the need for an external field entirely. Our analysis investigates the impact of current density (magnitude and rise/fall time), first- and second-order PMA fields, exchange bias, and field-like torque on the device's switching performance. By optimizing the perpendicular magnetic anisotropies, we report improvement in the write error rate from 10 - 4 to 10 - 7. Our findings hold promise for magnetic memory applications.