Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer

被引:0
|
作者
de Orio, Roberto Lacerda [1 ]
Ender, Johannes [2 ]
Fiorentini, Simone [2 ]
Goes, Wolfgang [3 ]
Selberherr, Siegfried [1 ]
Sverdlov, Viktor [2 ]
机构
[1] TU Wien, Inst Microelect, Vienna, Austria
[2] TU Wien, CDL Nonvolatile Memory & Log Inst Microelect, Vienna, Austria
[3] Silvaco Europe Ltd, Cambridge, England
关键词
Spin-orbit torque MRAM; perpendicular magnetization; magnetic field free switching; two-pulse switching scheme; SCHEME;
D O I
10.1109/EUROSOI-ULIS49407.2020.9365283
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the switching of a perpendicularly magnetized free layer by spin-orbit torques. The switching is accomplished by a purely electrical, two-current pulse scheme. The first pulse realizes the selection of the cell, while the second pulse, with a lower current, completes the switching deterministically. The second current is reduced by 50% without affecting the switching performance. This current reduction results in a reduction of about 80% of the power consumption by the second pulse. Even with such a large decrease of current and power, the switching time remains robust and fast, resulting in a very efficient switching scheme.
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页数:4
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