Two-dimensional half-metals MSi2N4 (M = Al, Ga, In, Tl) with intrinsic p-type ferromagnetism and ultrawide bandgaps

被引:1
|
作者
Ding, Yi-min [1 ]
Huo, Yiqi [2 ]
Fang, Gaojing [1 ,3 ]
Yan, Luo [1 ,2 ]
Wu, Yu [1 ]
Zhou, Liujiang [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
MONOLAYER; GRAPHENE;
D O I
10.1039/d3cp05940e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Intrinsic half-metallic nanomaterials with 100% spin polarization are highly demanded for next-generation spintronic devices. Here, by using first-principles calculations, we have designed a class of new two-dimensional (2D) p-type half-metals, MSi2N4 (M = Al, Ga, In and Tl), which show high mechanical, thermal and dynamic stabilities. MSi2N4 not only have ultrawide electronic bandgaps for spin-up channels in the range of 4.05 to 6.82 eV but also have large half-metallic gaps in the range of 0.75 to 1.47 eV, which are large enough to prevent the spin-flip transition. The calculated magnetic moment is 1 mu(B) per cell, resulting from polarized N1-p(x)/p(y) orbitals. Moreover, MSi2N4 possess robust long-range ferromagnetic orderings with Curie temperatures in the range of 35-140 K, originating from the interplay of N1-M-N1 superexchange interactions. Furthermore, spin dependent electronic transport calculations reveal 100% spin polarization. Our results highlight new promising 2D ferromagnetic half-metals toward future spintronic applications.
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页码:13327 / 13334
页数:8
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