Carrier transport mechanisms and photovoltaic performance of Ag/MoOx/Ag/MoOx/n-Si/C60/Al heterojunction solar cell

Silicon heterojunction (SHJ) technology marks a notable development in the photovoltaic sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is characterized by the formation of a heterojunction between crystalline silicon (c-Si) and carrier-selective materials, which are not necessarily based on intrinsic/doped a-Si:H. In this research, a transparent conductive multilayer structure consisting of MoOx/Ag/MoOx is utilized on the front illuminated side as hole-selective contacts, while a metal/organic polymer Al/C-60 is employed as a full-area rear electron-selective contact. This configuration results in an Ag/MoOx/Ag/MoOx/n-Si/C-60/Al heterojunction solar cell. The device was extensively investigated electrically under varying temperatures using techniques such as impedance spectroscopy, capacitance-voltage, and current-voltage measurements in dark conditions. Furthermore, the SHJ solar cell achieved an efficiency of 7.8% under 1 sun illumination, demonstrating its potential in the field of photovoltaics. These findings underscore the potential of this multilayer structure to enhance SHJ solar cell performance, marking a step forward in photovoltaic technology with implications for more efficient and cost-effective solar energy solutions.