A scalable ferroelectric non-volatile memory operating at 600 °C

Non-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics. However, creating such devices remains challenging. Here we report a non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode and can operate at temperatures of up to 600 degrees C. The devices are composed of metal-insulator-metal structures of nickel/AlScN/platinum grown on 4-inch silicon wafers. They exhibit clear ferroelectric switching up to 600 degrees C with distinct on and off states. At 600 degrees C, the devices exhibit one million read cycles and readable on-off ratios above 1 for over 60 h. The operating voltages of the AlScN ferrodiodes are less than 15 V at 600 degrees C and are thus compatible with silicon-carbide-based high-temperature logic technology. A non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode can operate at temperatures of up to 600 degrees C.