Si/WBG Hybrid Half-Bridge Converter Using Coupled Inductors for Power Quality Improvement and Control Simplification

被引:0
|
作者
Zhang, Chao [1 ]
Yuan, Xufeng [1 ]
Wang, Jun [2 ]
Hu, Bo [2 ]
Liu, Zeng [2 ]
Shen, Zheng John [3 ]
机构
[1] Guizhou Univ, Elect Engn Coll, Guiyang 550025, Peoples R China
[2] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Peoples R China
[3] Simon Fraser Univ, Sch Mechatron Syst Engn, Surrey, BC V3T 0A3, Canada
关键词
Silicon; Power quality; Insulated gate bipolar transistors; Inductors; Topology; Couplings; MOSFET; Coupled inductor; high power quality; hybrid Si/WBG; power factor correction; RIPPLE-COMPENSATION;
D O I
10.1109/TPEL.2023.3342133
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Si/WBG hybrid half-bridge (HHB) converter with hybrid frequency interleaved operation (HFIO) aims to offer an improved cost-performance tradeoff but suffers from uncompensable and low-frequency fluctuations in power quality issues and complicated control design. In this article, an Si/wide-bandgap (WBG) coupled half-bridge (CHB) is proposed, which coordinates the hybrid-frequency interleaved Si and WBG phase operation by a coupled inductor. By optimal configuring the coupling coefficient, the un-compensable, and low-frequency fluctuations of power quality issues can be completely addressed. Meanwhile, the HFIO controller is redesigned from the perspective of the modulated model predictive control, and the implementation can be greatly simplified under the selected optimal coefficient. A 3.3 kW Si insulated gate bipolar transistor (IGBT)/SiC mosfet CHB totem-pole bridgeless PFC (TPBPFC) prototype is built as a case study to validate the proposed design concept. In comparison to conventional Si/SiC HHB TPBPFC, the proposed Si/SiC CHB TPBPFC can achieve a maximum 64.7% total harmonic distortion (THD) reduction, demonstrating the same low ripple and THD performance as full high-frequency two-phase all-SiC design in all operating ranges while with 16.7% cost reduction.
引用
收藏
页码:3339 / 3352
页数:14
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