Nonvolatile memory devices based on organic field-effect transistors

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作者：
WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua School of Physics Science and TechnologyLanzhou UniversityLanzhou China Laboratory of Nanofabrication and Novel Device IntegrationInstitute of MicroelectronicsChinese Academy of SciencesBeijing China [1 ,2 ,1 ,2 ,2 ,2 ,2 ,1 ,730000 ,2 ,100029 ]
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来源：
Chinese Science Bulletin | 2011年 / 56卷 / 13期
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中图分类号：
TN32 [半导体三极管（晶体管）];
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摘要：
Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.
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页码：1325 / 1332
页数：8
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