Spin-based magnetic random-access memory for high-performance computing

被引:0
|
作者
Kaiming Cai [1 ,2 ]
Tianli Jin [3 ]
Wen Siang Lew [3 ]
机构
[1] School of Physics, Huazhong University of Science and Technology
[2] Interuniversity Microelectronics Centre(IMEC)
[3] School of Physical and Mathematical Sciences,Nanyang Technological University
关键词
D O I
暂无
中图分类号
学科分类号
摘要
<正>Memory serves as a critical component in today's electronic systems for data storage and processing. In traditional computer architectures, the logic and memory units are physically separated, due to the performance gap in operational speed and capacity among memories, resulting in the fundamental limitation of the von Neumann computers.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Spin-based magnetic random-access memory for high-performance computing
    Cai, Kaiming
    Jin, Tianli
    Lew, Wen Siang
    [J]. NATIONAL SCIENCE REVIEW, 2024, 11 (03)
  • [2] Magnetic Random-Access Memory-Based Approximate Computing: An Overview
    Wang, You
    Zhang, Kaili
    Wu, Bo
    Zhang, Deming
    Zhao, Weisheng
    Cai, Hao
    [J]. IEEE NANOTECHNOLOGY MAGAZINE, 2022, 16 (01) : 25 - 32
  • [3] Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing
    Shi, Yuhan
    Oh, Sangheon
    Huang, Zhisheng
    Lu, Xiao
    Kang, Seung H.
    Kuzum, Duygu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1126 - 1129
  • [4] Research on Progress of Computing In-Memory Based on Static Random-Access Memory
    Lin Zhiting
    Xu Tian
    Tong Zhongzhen
    Wu Xiulong
    Wang Fangming
    Peng Chunyu
    Lu Wenjuan
    Zhao Qiang
    Chen Junning
    [J]. JOURNAL OF ELECTRONICS & INFORMATION TECHNOLOGY, 2022, 44 (11) : 4041 - 4057
  • [5] THE RANDOM-ACCESS MEMORY ACCOUNTING MACHINE .2. THE MAGNETIC-DISK, RANDOM-ACCESS MEMORY
    NOYES, T
    DICKINSON, WE
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1957, 1 (01) : 72 - 75
  • [6] High-Performance and Radiation-Hard Carbon Nanotube Complementary Static Random-Access Memory
    Zhu, Ma-Guang
    Zhang, Zhiyong
    Peng, Lian-Mao
    [J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (07):
  • [7] STRESS OPERATED RANDOM-ACCESS, HIGH-SPEED MAGNETIC MEMORY
    SCHRODER, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 2759 - 2761
  • [8] Spin-Based Computing: Device Concepts, Current Status, and a Case Study on a High-Performance Microprocessor
    Kim, Jongyeon
    Paul, Ayan
    Crowell, Paul A.
    Koester, Steven J.
    Sapatnekar, Sachin S.
    Wang, Jian-Ping
    Kim, Chris H.
    [J]. PROCEEDINGS OF THE IEEE, 2015, 103 (01) : 106 - 130
  • [9] Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions
    G. Grynkewich
    J. Åkerman
    P. Brown
    B. Butcher
    R. W. Dave
    M. DeHerrera
    M. Durlam
    B. N. Engel
    J. Janesky
    S. Pietambaram
    N. D. Rizzo
    J. M. Slaughter
    K. Smith
    J. J. Sun
    S. Tehrani
    [J]. MRS Bulletin, 2004, 29 : 818 - 821
  • [10] Nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions
    Grynkewich, G
    Åkerman, J
    Brown, R
    Butcher, B
    Dave, RW
    DeHerrera, M
    Durlam, M
    Engel, BN
    Janesky, J
    Pietambaram, S
    Rizzo, ND
    Slaughter, JM
    Smith, K
    Sun, JJ
    Tehrani, S
    [J]. MRS BULLETIN, 2004, 29 (11) : 818 - 821