Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

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作者
陈弘达 [1 ]
张赞 [1 ]
黄北举 [1 ]
毛陆虹 [2 ]
张赞允 [3 ]
机构
[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
[2] Department of Electronics and Information Engineering, Tianjin University
[3] School of Electronics and Information Engineering, Tianjin Polytechnic
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摘要
Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects.Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
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页码:5 / 17
页数:13
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