Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

<正>The hot-carrier effect charactenstic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress.The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device.The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel.At low gate voltage,there is a hump in the sub-threshold curve of the back gate transistor,and it does not shift in the same way as the main transistor under stress.While under the same condition,there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.