Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

被引：0

作者：

郑齐文 ^{[1
,2
,3
]}

余学峰 ^{[1
,2
]}

崔江维 ^{[1
,2
]}

郭旗 ^{[1
,2
]}

丛忠超 ^{[1
,2
,3
]}

张兴尧 ^{[1
,2
,3
]}

邓伟 ^{[1
,2
,3
]}

张孝富 ^{[1
,2
,3
]}

吴正新 ^{[1
,2
,3
]}

机构：

[1] Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences

[2] Xinjiang Key Laboratory of Electric Information Materials and Devices

[3] University of Chinese Academy of

来源：

Journal of Semiconductors | 2013年 / 34卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

<正>The hot-carrier effect charactenstic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress.The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device.The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel.At low gate voltage,there is a hump in the sub-threshold curve of the back gate transistor,and it does not shift in the same way as the main transistor under stress.While under the same condition,there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.

引用

页码：91 / 96

页数：6

共 22 条

[1] Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
Zheng Qiwen
Yu Xuefeng
Cui Jiangwei
Guo Qi
Cong Zhongchao
Zhang Xingyao
Deng Wei
Zhang Xiaofu
Wu Zhengxin
JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
[2] Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
郑齐文
余学峰
崔江维
郭旗
丛忠超
张兴尧
邓伟
张孝富
吴正新
Journal of Semiconductors, 2013, (07) : 91 - 96
[3] Hot-carrier-induced degradation and lifetime prediction in off-state operation of deep submicron SOI N-MOSFETs
Renn, SH
Pelloie, JL
Balestra, F
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 283 - 288
[4] Effect of OFF-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature
Lee, Nam-Hyun
Baek, Dohyun
Kang, Bongkoo
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 856 - 858
[5] The degradation of p-MOSFETs under off-state stress
Yang, CY
Wang, Z
Tan, CH
Xu, MZ
MICROELECTRONICS JOURNAL, 2001, 32 (07) : 587 - 591
[6] HOT-ELECTRON-INDUCED DEGRADATION OF FRONT AND BACK CHANNELS IN PARTIALLY AND FULLY DEPLETED SIMOX MOSFETS
CRISTOLOVEANU, S
GULWADI, SM
IOANNOU, DE
CAMPISI, GJ
HUGHES, HL
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 603 - 605
[7] Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFET's
Renn, SH
Rauly, E
Pelloie, JL
Balestra, F
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) : 1140 - 1146
[8] Off-state Impact on FDSOI Ring Oscillator Degradation under High Voltage Stress
Trommer, Jens
Havel, Viktor
Chohan, Talha
Mehmood, Furqan
Slesazeck, Stefan
Krause, Gernot
Bossu, Germain
Arfaoui, Wafa
Muehlhoff, Armin
Mikolajick, T.
2018 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2018, : 10 - 14
[9] RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling
Otero-Carrascal, Alan
Chaparro-Ortiz, Dora
Srinivasan, Purushothaman
Huerta, Oscar
Gutierrez-Dominguez, Edmundo
Torres-Torres, Reydezel
MICROMACHINES, 2024, 15 (02)
[10] Degradation Mechanisms of Hydrogen-Terminated Diamond MISFETs Under Off-State Stress Conditions
Chen, Zhihao
Yu, Xinxin
Mao, Shuman
Zhou, Jianjun
Kong, Yuechan
Chen, Tangsheng
Xu, Ruimin
Yan, Bo
Xu, Yuehang
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 2012 - 2017

← 1 2 3 →