Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system

被引：0
|
作者：
Yongle Lou [1 ]
Yuming Zhang [1 ]
Hui Guo [1 ]
Daqing Xu [2 ]
Yimen Zhang [1 ]
机构：
[1] School of Microelectronics,Xidian University,Key laboratory of Wide Band-Gap Semiconductor Materials and Devices
[2] School of Electrical and Control Engineering,Xi'an University of Science and
来源：
Journal of Semiconductors | 2017年 / 38卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
The mechanism of perpendicular magnetic anisotropy(PMA)in a MgO-based magnetic tunnel junction(MTJ)has been studied in this article.By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures,such as Ta/CoFeB/MgO,Ta/CoFeB/Ta and Ru/CoFeB/MgO structures,it is found that a certain amount of Fe-oxide existing at the interface of CoFeB/MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB/MgO.In addition,Ta film plays an important role to enhance the PMA in Ta/CoFeB/MgO structure.
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页码：18 / 21
页数：4
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