Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

被引：0

作者：

金晓 ^{[1
]}

张红 ^{[1
]}

周荣秀 ^{[1
]}

金钊 ^{[2
]}

机构：

[1] College of Mechanical Engineering,Yantai Nanshan University

[2] School of Foreign Languages,Beijing Forestry

来源：

Journal of Semiconductors | 2013年 / 34卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

摘要：

<正>We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like the interface roughness scattering in a square quantum well,the roughness scattering at the AlxGa1-xAs/GaAs heterointerface can be characterized by parameters of roughness height A and lateral A,and in addition by electric field F.A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.

引用

页码：15 / 18

页数：4

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