Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

被引：0
|
作者：
金晓 [1 ]
张红 [1 ]
周荣秀 [1 ]
金钊 [2 ]
机构：
[1] College of Mechanical Engineering,Yantai Nanshan University
[2] School of Foreign Languages,Beijing Forestry
来源：
Journal of Semiconductors | 2013年 / 34卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O471.1 [半导体量子理论];
学科分类号：
摘要：
<正>We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like the interface roughness scattering in a square quantum well,the roughness scattering at the AlxGa1-xAs/GaAs heterointerface can be characterized by parameters of roughness height A and lateral A,and in addition by electric field F.A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.
引用
收藏
页码：15 / 18
页数：4
相关论文
共 50 条
  • [1] Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well
    金晓
    张红
    周荣秀
    金钊
    Journal of Semiconductors, 2013, (07) : 15 - 18
  • [2] Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well
    Jin Xiao
    Zhang Hong
    Zhou Rongxiu
    Jin Zhao
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
  • [3] Interface roughness scattering on electronic transport in a quantum well
    Zheng, YS
    Lü, TQ
    Zhang, CX
    Su, WH
    CHINESE PHYSICS LETTERS, 2003, 20 (10) : 1844 - 1847
  • [4] Alloy scattering in GaAs/AlGaAs quantum well infrared photodetector
    Fu, Y
    Willander, M
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 288 - 292
  • [5] THEORY OF THE GAAS/ALGAAS QUANTUM WELL
    EPPENGA, R
    SCHUURMANS, MFH
    PHILIPS TECHNICAL REVIEW, 1988, 44 (05): : 137 - 149
  • [6] Scattering by interface roughness of InAs/GaAs quantum well under some external influences
    Elias, Marwan Zuhair
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 108 : 96 - 99
  • [7] Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well
    Unuma, T
    Takahashi, T
    Noda, T
    Yoshita, M
    Sakaki, H
    Baba, M
    Akiyama, H
    APPLIED PHYSICS LETTERS, 2001, 78 (22) : 3448 - 3450
  • [8] Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well
    V. G. Mokerov
    G. B. Galiev
    J. Pozela
    K. Pozela
    V. Juciene
    Semiconductors, 2002, 36 : 674 - 678
  • [9] Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well
    Mokerov, VG
    Galiev, GB
    Pozela, J
    Pozela, K
    Juciene, V
    SEMICONDUCTORS, 2002, 36 (06) : 674 - 678
  • [10] Influence of interface roughness scattering on electronic magnetotransport in a quantum well
    Zheng, YO
    Lü, TQ
    Zhang, CX
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (06) : 783 - 786
12345