Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate

被引：0

作者：

韩锴 ^{[1
,2
]}

马雪丽 ^{[2
]}

项金娟 ^{[2
]}

杨红 ^{[2
]}

王文武 ^{[2
]}

机构：

[1] Department of Physics and Electronic Science, Weifang University

[2] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2013年 / 34卷 / 11期

基金：

中国国家自然科学基金;

关键词：

ALD HfO2; TiN; low temperature annealing; hysteresis;

D O I：

暂无

中图分类号：

TM53 [电容器];

学科分类号：

080801 ;

摘要：

The effects of low temperature annealing,such as post high-k dielectric deposition annealing(PDA),post metal annealing(PMA)and forming gas annealing(FGA)on the electrical characteristics of a metal–oxide–semiconductor(MOS)capacitor with a TiN metal gate and a HfO2dielectric are systematically investigated.It can be found that the low temperature annealing can improve the capacitance–voltage hysteresis performance significantly at the cost of increasing gate leakage current.Moreover,FGA could effectively decrease the interfacial state density and oxygen vacancy density,and PDA could make the flat band positively shift which is suitable for P-type MOSs.

引用

页码：57 / 60

页数：4

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