Growth and characteristics of p-type doped GaAs nanowire

被引：0
|
作者：
Bang Li
Xin Yan
Xia Zhang
Xiaomin Ren
机构：
[1] StateKeyLaboratoryofInformationPhotonicsandOpticalCommunications,BeijingUniversityofPostsandTelecommunications
来源：
Journal of Semiconductors | 2018年 / 39卷 / 05期
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D O I：
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中图分类号：
TN304 [材料];
学科分类号：
摘要：
The growth of p-type GaAs nanowires(NWs)on GaAs(111)B substrates by metal-organic chemical vapor deposition(MOCVD)has been systematically investigated as a function of diethyl zinc(DEZn)flow.The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow.In addition,the Ⅰ–Ⅴ curves of GaAs NWs has been measured and the p-type dope concentration under the Ⅱ/Ⅲ ratio of 0.013 and 0.038 approximated to 1019–1020
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页码：30 / 33
页数：4
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