Modeling and simulation of single-event effect in CMOS circuit

This paper reviews the status of research in modeling and simulation of single-event effects(SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device(direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices(bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients(SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.