Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current（/d）,transconductance to drain current ratio（gm/Id）,Ion/Ioff,the cut-off frequency（fT） and the maximum frequency of oscillation（/max） are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLASTM.It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics（gm/Id,fT and /max） compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of 2.5 and 3 times in the case of fT and /max values respectively compared with the nanowire-based gate-all-around（GAA） MOSFET.