A high linearity X-band SOI CMOS digitally-controlled phase shifter

被引：0

作者：

陈亮 ^{[1
,2
]}

陈新宇 ^{[1
]}

张有涛 ^{[1
,3
]}

李智群 ^{[2
]}

杨磊 ^{[1
]}

机构：

[1] Nanjing Electronic Devices Institute Guobo Electronics CoLtd

[2] RF & OE IC Institute Southeast University

[3] Science and Technology on Monolithic Integrated Circuits and Modules

来源：

Journal of Semiconductors | 2015年 / 36卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TN623 [移相器、铁氧体移相器];

学科分类号：

摘要：

This paper proposed an X-band 6-bit passive phase shifter(PS) designed in 0.18 m silicon-on-insulator(SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and flat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5°. The input and output VSWRs are less than 2 and the insertion loss(IL) is between 8–14 dB. across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB. compression point(IP1dB) is 20 dB.m.

引用

页码：119 / 126

页数：8

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