Low temperature Sn-rich Au–Sn wafer-level bonding

被引：0
|
作者：
方志强 [1 ,2 ]
毛旭 [1 ,2 ]
杨晋玲 [1 ,2 ]
杨富华 [1 ]
机构：
[1] Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences
[2] State Key Laboratory of Transducer
来源：
Journal of Semiconductors | 2013年 / 34卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Sn-rich Au–Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices.The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au–Sn system makes a major contribution to the high bonding shear strength.The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10-7 atm·cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃.This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.
引用
收藏
页码：165 / 168
页数：4
相关论文
共 50 条
  • [1] Low temperature Sn-rich Au–Sn wafer-level bonding
    方志强
    毛旭
    杨晋玲
    杨富华
    Journal of Semiconductors, 2013, (10) : 165 - 168
  • [2] Low temperature Sn-rich Au-Sn wafer-level bonding
    Fang Zhiqiang
    Mao Xu
    Yang Jinling
    Yang Fuhua
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (10)
  • [3] A wafer-level Sn-rich Au-Sn intermediate bonding technique with high strength
    Fang, Zhiqiang
    Mao, Xu
    Yang, Jinling
    Yang, Fuhua
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (09)
  • [4] A Wafer-Level Sn-Rich Au-Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sensors
    Mao Xu
    Lv Xing-Dong
    Wei Wei-Wei
    Zhang Zhe
    Yang Jin-Ling
    Qi Zhi-Mei
    Yang Fu-Hua
    CHINESE PHYSICS LETTERS, 2014, 31 (05)
  • [5] Fluxless wafer bonding with Sn-rich Sn-Au dual-layer structure
    Kim, J
    Lee, CC
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2006, 417 (1-2): : 143 - 148
  • [6] Low temperature transient liquid phase bonding of Au/Sn and Cu/Sn electroplated material systems for MEMS wafer-level packaging
    S. Marauska
    M. Claus
    T. Lisec
    B. Wagner
    Microsystem Technologies, 2013, 19 : 1119 - 1130
  • [7] Low temperature transient liquid phase bonding of Au/Sn and Cu/Sn electroplated material systems for MEMS wafer-level packaging
    Marauska, S.
    Claus, M.
    Lisec, T.
    Wagner, B.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2013, 19 (08): : 1119 - 1130
  • [8] Sn-Rich Au-Sn Hermetic Packaging at Wafer Level and Its Application in SPR Sensor
    Mao, Xu
    Fang, Zhiqiang
    Zhang, Zhe
    Yang, Jinling
    Qi, Zhimei
    Yang, Fuhua
    2013 8TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE NEMS 2013), 2013, : 244 - 247
  • [9] Wafer bonding using fluxless process with Sn-rich Sn-Au dual-layer structure
    Lee, CC
    Kim, J
    2005 10TH INTERNATIONAL SYMPOSIUM ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES, 2005, : 105 - 109
  • [10] Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness
    Wu, Zijian
    Cai, Jian
    Wang, Qian
    Wang, Junqiang
    Wang, Dejun
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (10) : 6111 - 6118
12345