SHARP 1.54 MU-M LUMINESCENCE FROM POROUS ERBIUM IMPLANTED SILICON

被引：17
|
作者：
TASKIN, T
GARDELIS, S
EVANS, JH
HAMILTON, B
PEAKER, AR
机构：
[1] Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester, M60 1QD
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 24期
关键词：
LUMINESCENCE; POROUS SILICON;
D O I：
10.1049/el:19951439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sharp luminescence at 1.54 mu m from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.
引用
收藏
页码：2132 / 2133
页数：2
相关论文
共 50 条
  • [41] Luminescence of porous silicon alloyed with erbium
    Bondarenko, VP
    Vorozov, NN
    Dolgii, LN
    Dorofeev, AM
    Kazyuchits, NM
    Leshok, AA
    Troyanova, GN
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (24): : 84 - 87
  • [42] ROOM-TEMPERATURE 1.5 MU-M LUMINESCENCE OF CO-DEPOSITED ERBIUM AND GERMANIUM
    CHEN, JH
    PANG, D
    CHEONG, HM
    WICKBOLDT, P
    PAUL, W
    APPLIED PHYSICS LETTERS, 1995, 67 (15) : 2182 - 2184
  • [43] Luminescence from erbium implanted silicon-germanium quantum wells
    Huda, MQ
    Evans-Freeman, JH
    Peaker, AR
    Houghton, DC
    Nejim, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 2928 - 2933
  • [44] Raman emission in porous silicon at 1.54 μm
    Sirleto, L
    Raghunatan, V
    Rossi, A
    Jalali, B
    ELECTRONICS LETTERS, 2004, 40 (19) : 1221 - 1222
  • [45] 1.54-MU-M PHOTOLUMINESCENCE FROM ER-IMPLANTED GAN AND ALN
    WILSON, RG
    SCHWARTZ, RN
    ABERNATHY, CR
    PEARTON, SJ
    NEWMAN, N
    RUBIN, M
    FU, T
    ZAVADA, JM
    APPLIED PHYSICS LETTERS, 1994, 65 (08) : 992 - 994
  • [46] ERBIUM-DOPED GAAS LIGHT-EMITTING-DIODES EMITTING ERBIUM F-SHELL LUMINESCENCE AT 1.54-MU-M
    WHITNEY, PS
    UWAI, K
    NAKAGOME, H
    TAKAHEI, K
    ELECTRONICS LETTERS, 1988, 24 (12) : 740 - 741
  • [47] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
    ENNEN, H
    POMRENKE, G
    AXMANN, A
    EISELE, K
    HAYDL, W
    SCHNEIDER, J
    APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
  • [48] Rutherford Backscattering and Luminescence Studies Erbium Implanted Silicon
    李仪
    李菊生
    金亿鑫
    时伯荣
    蒋红
    翟宏营
    刘学彦
    刘向东
    JOURNALOFRAREEARTHS, 1994, (03) : 179 - 182
  • [49] 1.54 μm luminescence quenching of erbium-doped hydrogeated amorphous silicon deposited by DC magnetron sputtering
    Kechouane, M
    Biggemen, D
    Tessler, LR
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 285 - 289
  • [50] Erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon
    Journal of Applied Physics, 1995, 78 (06):
12345