MOVPE GROWN GAALAS/GAAS DH DEVICES OPERATING AS LASER-DIODES AND BIPOLAR-TRANSISTORS FOR OPTOELECTRONIC INTEGRATION

被引：0

作者：

TEMMYO, J ^{[1
]}

HASUMI, Y ^{[1
]}

KOZEN, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2364 / 2364

页数：1

共 10 条

[1] STUDY OF LATERAL MODES IN WIDE GAAS-GAALAS DH LASER-DIODES
LENGYEL, G
WOLF, HD
ZSCHAUER, KH
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1977, 67 (10) : 1424 - 1424
[2] GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
GLEW, RW
FROST, MS
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 450 - 452
[3] INFLUENCE OF EXTERNAL MIRROR HEATING ON EMISSION CHARACTERISTICS OF GAAS-GAALAS DH LASER-DIODES
WOLF, HD
ZSCHAUER, KH
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1977, 67 (10) : 1424 - 1424
[4] LONG-LIVED GAALAS-GAAS DH LASER-DIODES FOR OPTICAL FIBER COMMUNICATIONS
HORI, K
IMAI, H
TAKUSAGAWA, M
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (04): : 95 - 109
[5] RECOMBINATION ENHANCED POINT-DEFECT MOBILITY AND DEGRADATION OF GAALAS-GAAS (DH) LASER-DIODES
PETROFF, PM
KIMERLING, LC
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 265 - 265
[6] PICOSECOND OPTOELECTRONIC GATING OF SILICON BIPOLAR-TRANSISTORS BY LOCALLY INTEGRATED GAAS PHOTOCONDUCTIVE DEVICES
MORSE, JD
MARIELLA, RP
ANDERSON, GD
DUTTON, RW
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) : 379 - 381
[7] CHOICE OF EPITAXIAL STRUCTURE TO PROMOTE PERFORMANCE AND UNIFORMITY OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOVPE
WESTERGREN, U
WILLEN, B
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1056 - 1062
[8] ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH C-DOPED BASE GROWN BY AP-MOVPE
TANAKA, S
ITO, M
IKEDA, M
KIKUTA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 812 - 816
[9] GAAS BIPOLAR-TRANSISTORS WITH A GA0.5IN0.5P HOLE BARRIER LAYER AND CARBON-DOPED BASE GROWN BY MOVPE
LAUTERBACH, T
PLETSCHEN, W
BACHEM, KH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) : 753 - 756
[10] GAAS-GAALAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER-DIODES SELECTIVELY GROWN BY MOLECULAR-BEAM EPITAXY ON SIO2-MASKED SUBSTRATES
HONG, JM
WU, MC
WANG, S
WANG, WI
CHANG, LL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 886 - 888

← 1 →