共 50 条
- [1] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPEJOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 621 - 638ABULFADL, ASTEFANAKOS, ENANCE, WCOLLIS, WMCPHERSON, J
- [2] PHOTOLUMINESCENCE OF GAAS-LAYERS HYBRID-GROWN ON SI BY MBE AND LPEJOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 519 - 523YAZAWA, YMINEMURA, TUNNO, T
- [3] LPE GROWN GAAS-LAYERS FROM GA-AS-BI SOLUTIONJOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 568 - 574PANEK, MRATUSZEK, MTLACZALA, M
- [4] DEFECT STRUCTURE AND ELECTRONIC CHARACTERISTICS OF GAAS-LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1381 - 1385IMAMURA, YJASTRZEBSKI, LGATOS, HC
- [5] DIFFUSION-LENGTH MEASUREMENTS IN MELT-GROWN AND LPE-GROWN GAAS-LAYERSSOUTH AFRICAN JOURNAL OF PHYSICS - SUID-AFRIKAANSE TYDSKRIF VIR FISIKA, 1981, 4 (04): : 106 - 112LEITCH, AWRAURET, FDVERMAAK, JS
- [6] THE TRANSITION LAYERS IN ALGAAS/GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LPECRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (05) : 491 - 502BOLKHOVITYANOV, YB
- [7] PHOTOREFLECTANCE OF INTRINSIC GAAS EPITAXIAL LAYERS GROWN BY LPE WITH SUPERCOOLINGREVISTA MEXICANA DE FISICA, 1993, 39 (06) : 924 - 931ALEJOARMENTA, CVAZQUEZLOPEZ, CTORRESDELGADO, GMENDOZAALVAREZ, JGALVARADOGIL, JJ
- [8] SURFACE MORPHOLOGY OF GAAS LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1560 - 1561IMAMURA, YJASTRZEBSKI, LGATOS, HC
- [9] PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON SURFACES OF GAAS LAYERS GROWN BY LPEJOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) : 257 - 266SMALL, MBBLAKESLEE, AESHIH, KKPOTEMSKI, RM
- [10] TRACING OF TERRACE GROWTH IN GAAS LPE LAYERSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C140 - C140BAUSER, EFISCHER, BSULLIVAN, PA