EFFICIENT DIFFRACTION-LIMITED BEAM COMBINING OF SEMICONDUCTOR-LASER DIODE-ARRAYS USING PHOTOREFRACTIVE BATIO3

被引：18

作者：

VERDIELL, JM

RAJBENBACH, H

HUIGNARD, JP

机构：

[1] Laboratoire Central de Recherches, Thomson-CSF

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1109/68.58051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report beam combining of 820 nm wavelength laser diodes using two-wave mixing in BaTiO3. Energy transfer efficiencies up to 80% are obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays is demonstrated. Nearly 100 mW power in a diffraction-limited beam is obtained on the combined beam. Crystal response time of the order of a few seconds is measured. © 1990 IEEE

引用

页码：568 / 570

页数：3

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