共 50 条
- [23] Dependence of wet oxidation on the defect density in 3C-SiC SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 663 - 666
- [24] PRESSURE-DEPENDENCE OF THE ZINC SELENIDE RAMAN INTENSITY JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (19): : 4173 - 4176
- [25] PRESSURE-DEPENDENCE OF BRILLOUIN AND RAMAN SPECTRA OF FERROELECTRIC BATIO3 BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 245 - &
- [26] Micro-Raman analysis of a micromachined 3C-SiC cantilever SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 525 - +
- [27] Raman investigation of stress relaxation at the 3C-SiC/Si interface SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 395 - 398
- [28] The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes MECHANICAL AND MATERIALS ENGINEERING, 2014, 554 : 66 - +
- [29] Raman scattering spectroscopy of 3C-SiC(111) heteroepitaxial films Yamanaka, Mitsugu, 1600, Publ by JJAP, Minato-ku (33):
- [30] Raman scattering in polycrystalline 3C-SiC: Influence of stacking faults PHYSICAL REVIEW B, 1998, 58 (15): : 9858 - 9862